Manufacturer Part Number
BSC093N04LSGATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC093N04LSGATMA1 is a N-channel MOSFET transistor from Infineon Technologies, designed for power management and switching applications.
Product Features and Performance
40V drain-to-source voltage
3mΩ maximum on-resistance at 40A, 10V
13A continuous drain current at 25°C ambient temperature
49A continuous drain current at 25°C case temperature
1900pF maximum input capacitance at 20V
5W maximum power dissipation at 25°C ambient temperature
35W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for high efficiency
High current capability
Small package size for compact designs
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.3mΩ
Continuous Drain Current (Id): 13A (Ta), 49A (Tc)
Input Capacitance (Ciss): 1900pF
Power Dissipation (Pd): 2.5W (Ta), 35W (Tc)
Threshold Voltage (Vgs(th)): 2V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Lighting systems
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Several Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Compact package size for space-constrained designs
Wide operating temperature range for reliable operation in diverse environments
Proven quality and reliability from a reputable manufacturer
Compatibility with a variety of power management and switching applications
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