Manufacturer Part Number
BSC0924NDIATMA1
Manufacturer
Infineon Technologies
Introduction
Infineon's OptiMOS series MOSFET array, featuring a dual asymmetrical N-channel design.
Product Features and Performance
Dual N-channel MOSFET array in 8-pin PowerTDFN package
Low on-resistance of 5mΩ @ 20A, 10V
Continuous drain current of 17A at 25°C, up to 32A
Extremely low input capacitance of 1160pF @ 15V
Logic level gate with 4.5V drive
Threshold voltage of 2V @ 250A
Product Advantages
Efficient power conversion with low conduction losses
Compact and space-saving package
Suitable for high-current, high-frequency applications
Optimized for low-voltage, high-current switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 5mΩ @ 20A, 10V
Continuous Drain Current (Id): 17A @ 25°C, up to 32A
Input Capacitance (Ciss): 1160pF @ 15V
Gate Charge (Qg): 10nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Optimized for reliable and efficient power conversion
Compatibility
Suitable for a wide range of low-voltage, high-current switching applications
Application Areas
Power supplies
Motor drives
Industrial automation
Telecom and server power
Product Lifecycle
Current product, no discontinuation planned
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance with low on-resistance and input capacitance
Compact and space-saving package
Suitable for high-current, high-frequency applications
Optimized for efficient power conversion with low conduction losses
