Manufacturer Part Number
BSC070N10NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor designed for efficient power conversion and control applications.
Product Features and Performance
100V drain-source voltage rating
Ultra-low on-resistance of 7mΩ @ 50A, 10V
Continuous drain current of 90A at 25°C case temperature
High input capacitance of 4000pF @ 50V
Low gate charge of 55nC @ 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal and electrical performance
High power density and reliability
Compact PowerTDFN package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7mΩ @ 50A, 10V
Continuous Drain Current (Id): 90A @ 25°C
Input Capacitance (Ciss): 4000pF @ 50V
Power Dissipation (Pd): 114W @ Tc
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Suitable for a wide range of power conversion and control applications, including:
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Application Areas
High-efficiency power conversion
Motor control
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely available part. No discontinuation or replacement is expected in the near future.
Key Reasons to Choose This Product
Excellent electrical and thermal performance for high-efficiency power conversion
Compact and reliable PowerTDFN package
Wide operating temperature range and RoHS3 compliance for industrial and automotive applications
Optimized for high-power density and reliability in power conversion circuits
Cost-effective solution for a variety of power control and conversion applications
