Manufacturer Part Number
BSC067N06LS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with low on-resistance and high switching speed
Product Features and Performance
Optimized for high-frequency switching applications
Very low on-resistance (6.7 mΩ) for high efficiency
Fast switching speed for high-frequency operation
High current capability (50 A continuous drain current)
Robust design with high avalanche capability
Product Advantages
Excellent energy efficiency due to low conduction and switching losses
Compact design enabled by high power density
Reliable operation in demanding applications
Key Technical Parameters
Drain-Source Voltage (Vds): 60 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 6.7 mΩ
Continuous Drain Current (Id): 15 A (Ta), 50 A (Tc)
Input Capacitance (Ciss): 5100 pF
Power Dissipation (Ptot): 2.5 W (Ta), 69 W (Tc)
Quality and Safety Features
ROHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power electronics and motor control applications
Application Areas
High-frequency power conversion
Motor drives
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Upgrades and replacements may be available in the future as technology advances.
Several Key Reasons to Choose This Product
Excellent energy efficiency and high power density for compact designs
Reliable and robust operation in demanding applications
High current capability and fast switching speed for high-frequency operation
Wide operating temperature range (-55°C to 150°C)
ROHS3 compliance for use in various applications
