Manufacturer Part Number
BSC065N06LS5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel OptiMOS MOSFET with low on-resistance for efficient power conversion applications.
Product Features and Performance
Low on-resistance of 6.5 mΩ at 32 A, 10 V
High continuous drain current of 64 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1800 pF at 30 V
Fast switching performance
Product Advantages
Improved energy efficiency in power conversion systems
Reduced power losses and heat dissipation
Reliable operation across a wide temperature range
Compact design enabled by high current capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 64 A at 25°C
On-Resistance (Rds(on)): 6.5 mΩ at 32 A, 10 V
Input Capacitance (Ciss): 1800 pF at 30 V
Power Dissipation (Tc): 46 W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power conversion applications, such as:
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting systems
Industrial automation equipment
Application Areas
Efficient power conversion in industrial, consumer, and automotive electronics
High-frequency, high-current switching applications
Power factor correction (PFC) circuits
Motor control and drive systems
Product Lifecycle
This product is an active and widely used MOSFET in Infineon's OptiMOS series. It is not nearing discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses due to the low on-resistance
High current capability and wide operating temperature range for reliable performance
Fast switching characteristics for high-frequency power conversion applications
Compact design enabled by the high current density
Proven reliability and safety features for industrial and consumer applications
