Manufacturer Part Number
BSC032NE2LSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor for power management and control applications
Product Features and Performance
Low on-resistance for low power loss
High current handling capability up to 84A
Fast switching for high-frequency operation
Low gate charge for energy-efficient operation
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Compact and space-saving design
Reliable and durable construction
Key Technical Parameters
Drain-to-source voltage (Vdss): 25V
On-resistance (Rds(on)): 3.2mΩ
Continuous drain current (Id): 22A (Ta), 84A (Tc)
Input capacitance (Ciss): 1200pF
Power dissipation: 2.8W (Ta), 78W (Tc)
Gate-to-source voltage (Vgs): ±20V
Quality and Safety Features
RoHS3 compliant
Robust packaging for reliable operation
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for improved system reliability
High current handling capability for demanding applications
Fast switching and low gate charge for energy-efficient operation
Compact and space-saving design for flexible system integration
Reliable and durable construction for long-term operation
