Manufacturer Part Number
BSC032N04LSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC032N04LSATMA1 is a high-performance N-Channel power MOSFET from Infineon Technologies.
Product Features and Performance
40V drain-to-source voltage
2mΩ maximum on-resistance at 50A and 10V gate-to-source voltage
21A continuous drain current at 25°C ambient temperature
98A continuous drain current at 25°C case temperature
1800pF maximum input capacitance at 20V drain-to-source voltage
5W maximum power dissipation at 25°C ambient temperature
52W maximum power dissipation at 25°C case temperature
Product Advantages
Excellent on-resistance and current handling capability
Low input capacitance for fast switching
High power dissipation capability
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 40V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.2mΩ
Continuous drain current (Id): 21A (ambient), 98A (case)
Input capacitance (Ciss): 1800pF
Power dissipation (Pd): 2.5W (ambient), 52W (case)
Quality and Safety Features
RoHS3 compliant
Surface mount package for high-density PCB design
Compatibility
Suitable for a wide range of power conversion applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Power conversion
Motor drives
Power supplies
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent on-resistance and current handling capability for high-efficiency power conversion
Low input capacitance for fast switching performance
High power dissipation capability for compact and efficient designs
Reliable and RoHS-compliant construction for long-lasting operation
Compatibility with a wide range of power conversion applications
