Manufacturer Part Number
BSC029N025SG
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel power MOSFET transistor
Product Features and Performance
Low on-resistance (RDS(on)) for high efficiency
Fast switching speed
Low gate charge for high-frequency operation
Optimized for high-current power conversion applications
Product Advantages
Excellent thermal and electrical performance
High power density
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-Resistance (RDS(on)): 2.9mΩ @ 50A, 10V
Continuous Drain Current (ID): 24A (Ta), 100A (Tc)
Input Capacitance (Ciss): 5090pF @ 15V
Power Dissipation: 2.8W (Ta), 78W (Tc)
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C (TJ)
Compatibility
Suitable for various power conversion applications, such as DC-DC converters, motor drives, and power supplies
Application Areas
High-frequency power conversion
Industrial and automotive electronics
Renewable energy systems
Server and telecom power systems
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Fast switching capability for high-frequency operation
Reliable and robust design for demanding applications
Compatibility with a wide range of power conversion systems
Backed by Infineon's expertise in power semiconductor technologies
