Manufacturer Part Number
BSC028N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET for energy-efficient and high-density power conversion applications.
Product Features and Performance
Optimized for high-frequency switching
Low on-resistance (2.8 mΩ) for low power losses
High current handling capability (23 A continuous, 100 A pulsed)
Fast switching with low gate charge (37 nC)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent efficiency and thermal performance
Supports high-density and high-frequency designs
Robust and reliable operation
Key Technical Parameters
Drain-source voltage (Vdss): 60 V
Gate-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 2.8 mΩ
Drain current (Id): 23 A (Ta), 100 A (Tc)
Input capacitance (Ciss): 2700 pF
Power dissipation: 2.5 W (Ta), 83 W (Tc)
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Suitable for a wide range of power conversion applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Servers and data centers
Industrial equipment
Renewable energy systems
Consumer electronics
Product Lifecycle
The BSC028N06NSATMA1 is an active product and not nearing discontinuation.
Replacement or upgrade options are available from Infineon's OptiMOS product family.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for energy-efficient designs
High current handling and fast switching capabilities for high-density and high-frequency applications
Robust and reliable operation across a wide temperature range
RoHS3 compliance for environmentally-friendly applications
Compatibility with a broad range of power conversion systems
