Manufacturer Part Number
BSC019N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC019N06NSATMA1 is a high-performance N-Channel power MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
100A Continuous Drain Current (Id) at 25°C
95mOhm On-Resistance (Rds(on)) at 50A, 10V
-55°C to 175°C Operating Temperature Range
Low Gate Charge (Qg) of 77nC at 10V
Fast Switching Capability
Product Advantages
Excellent thermal performance and power dissipation
Minimal power losses due to low on-resistance
Wide operating temperature range
Suitable for high-current, high-frequency applications
Key Technical Parameters
Vdss: 60V
Vgs(max): ±20V
Rds(on) (max): 1.95mOhm
Id (continuous): 100A
Ciss (max): 5250pF
Power Dissipation (max): 136W
Quality and Safety Features
RoHS3 Compliant
ESD Protection
Compatibility
This power MOSFET is suitable for a wide range of power electronics applications, including power supplies, motor drives, and industrial automation equipment.
Application Areas
Power Supplies
Motor Drives
Industrial Automation
Switched-Mode Power Supplies
Inverters
Converters
Product Lifecycle
The BSC019N06NSATMA1 is an actively supported product from Infineon Technologies. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent thermal performance and power dissipation
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Fast switching capability for high-frequency applications
RoHS3 compliance for environmentally-friendly design
Compatibility with a wide range of power electronics applications
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