Manufacturer Part Number
BSC019N04NSG
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Single transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
OptiMOS 3 series
40V drain-source voltage
9mΩ max on-resistance at 50A, 10V
29A continuous drain current at 25°C ambient
204A continuous drain current at 25°C case
8800pF max input capacitance at 20V
5W power dissipation at 25°C ambient
125W power dissipation at 25°C case
±20V gate-source voltage
Product Advantages
Low on-resistance for high efficiency
High current capability
Compact surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.9mΩ
Continuous Drain Current (Id): 29A (ambient), 204A (case)
Input Capacitance (Ciss): 8800pF
Power Dissipation: 2.5W (ambient), 125W (case)
Quality and Safety Features
Operating temperature range: -55°C to 150°C
Qualified for automotive and industrial applications
Compatibility
Surface mount package (PG-TDSON-8-1)
Application Areas
Power conversion and control
Motor drives
Switch-mode power supplies
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High current and power handling capability
Excellent efficiency due to low on-resistance
Compact surface-mount package
Suitable for demanding automotive and industrial applications
Extensive operating temperature range
