BFR949TE6327 - Infineon Technologies

Manufacturer Part Number

BFR949TE6327

Manufacturer

Infineon Technologies

Introduction

The BFR949TE6327 is a high-performance NPN bipolar junction transistor (BJT) designed for RF applications.

Product Features and Performance

Operates at a maximum power of 250mW

Supports a maximum collector-emitter voltage of 10V

Provides a maximum collector current of 35mA

Offers a high DC current gain (hFE) of 100 at 5mA and 6V

Achieves a high transition frequency of 9GHz

Provides a power gain of 20dB

Exhibits a low noise figure of 1dB to 1.5dB at 1GHz to 1.8GHz

Product Advantages

Excellent high-frequency performance for RF applications

Robust design with a wide operating temperature range up to 150°C

Small surface-mount package (SC-75, SOT-416) for compact designs

RoHS-compliant for environmentally friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 10V

Collector Current (Max): 35mA

DC Current Gain (hFE): 100 @ 5mA, 6V

Transition Frequency: 9GHz

Power Gain: 20dB

Noise Figure: 1dB to 1.5dB @ 1GHz to 1.8GHz

Quality and Safety Features

Complies with RoHS3 requirements for hazardous substance restrictions

Supported by Infineon's quality and reliability standards

Compatibility

Surface-mount package (SC-75, SOT-416) suitable for various PCB designs

Application Areas

RF amplifiers

Wireless communication systems

Radar and satellite communications

Test and measurement equipment

Product Lifecycle

Currently in production

Replacement or upgrade options may be available from Infineon

Several Key Reasons to Choose This Product

Exceptional high-frequency performance for RF applications

Robust and reliable design with a wide operating temperature range

Compact surface-mount package for space-constrained designs

Compliance with RoHS3 standards for environmental responsibility

Backed by Infineon's reputation for quality and technical support