BFR93AWH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BFR93AWH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

High-frequency NPN silicon bipolar transistor

Suitable for RF and microwave applications

Product Features and Performance

Excellent high-frequency performance

Transition frequency (fT) of 6GHz

Power dissipation of 300mW

Collector-emitter breakdown voltage of 12V

Collector current of 90mA

DC current gain (hFE) of 70 at 30mA, 8V

Gain of 10.5dB to 15.5dB

Noise figure of 1.5dB to 2.6dB at 900MHz to 1.8GHz

Product Advantages

Robust and reliable design

Optimized for high-frequency applications

Excellent noise performance

Key Technical Parameters

Operating temperature: -55°C to +150°C

Transistor type: NPN

Mounting type: Surface mount

Quality and Safety Features

RoHS 3 compliant

Manufactured in ISO-certified facilities

Compatibility

Can be used in a wide range of RF and microwave applications

Application Areas

Radio frequency (RF) amplifiers

Microwave communication systems

Wireless communications

Test and measurement equipment

Product Lifecycle

Currently in production

Replacement or upgrade options available from Infineon

Several Key Reasons to Choose This Product

High-frequency performance for demanding applications

Robust and reliable design for long-term use

Excellent noise performance for critical RF circuits

Compatibility with a wide range of applications

Availability of replacement and upgrade options from the manufacturer