Manufacturer Part Number
BFR193FH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Infineon's BFR193FH6327XTSA1 is a high-frequency, low-noise NPN bipolar junction transistor (BJT) designed for RF and microwave applications.
Product Features and Performance
Frequency Transition: 8GHz
Gain: 12.5dB
Noise Figure: 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Power Handling: 580mW
Collector-Emitter Breakdown Voltage: 12V
Collector Current: 80mA
DC Current Gain (hFE): 70 @ 30mA, 8V
Operating Temperature: -55°C to 150°C
Product Advantages
High-frequency performance for RF and microwave applications
Low noise figure for improved signal-to-noise ratio
Robust design with high power handling capability
Key Technical Parameters
Transistor Type: NPN
Packaging: SOT-723 (PG-TSFP-3)
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Manufactured to Infineon's high-quality standards
RoHS3 compliant for environmental responsibility
Compatibility
The BFR193FH6327XTSA1 is compatible with a wide range of RF and microwave circuits and systems.
Application Areas
Radio frequency (RF) amplifiers
Microwave amplifiers
Wireless communications equipment
Test and measurement instruments
Product Lifecycle
The BFR193FH6327XTSA1 is an active product and is currently available. Infineon offers replacement and upgrade options as needed.
Key Reasons to Choose This Product
High-frequency performance for advanced RF and microwave applications
Low noise figure for improved signal quality
Robust design with high power handling capability
Manufactured to Infineon's high-quality standards
RoHS3 compliant for environmental responsibility
Availability of replacement and upgrade options
BFR193E-6327Siemens
BFR193TWElectro-Films (EFI) / Vishay