Manufacturer Part Number BFR193E6327HTSA1
Manufacturer: Infineon Technologies
Transistors - Bipolar (BJT) - RF
ROHS3 Compliant
PG-SOT23 Package
TO-236-3, SC-59, SOT-23-3 Package
Tape & Reel (TR) Packaging
Introduction
High-performance NPN bipolar RF transistor for use in wireless communication applications.
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Max: 580mW
Voltage Collector Emitter Breakdown (Max): 12V
Current Collector (Ic) (Max): 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency Transition: 8GHz
Gain: 10dB ~ 15dB
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Product Advantages
High-frequency performance
Low noise
High gain
Suitable for wireless communication applications
Key Technical Parameters
Transistor Type: NPN
Mounting Type: Surface Mount
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for use in wireless communication applications.
Application Areas
Wireless communications
RF amplifiers
Transmitters
Receivers
Product Lifecycle
The BFR193E6327HTSA1 is an active product, and replacements or upgrades may be available.
Key Reasons to Choose This Product
High-frequency performance up to 8GHz
Low noise figure of 1dB to 1.6dB
High gain of 10dB to 15dB
Suitable for a wide range of wireless communication applications
ROHS3 compliant for environmental safety
BFR193E-6327Siemens