Manufacturer Part Number
BDP954E6327
Manufacturer
Infineon Technologies
Introduction
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
High power rating of 5W
Wide collector-emitter breakdown voltage of 100V
High collector current rating of 3A
Low collector-emitter saturation voltage of 500mV @ 2A
High DC current gain of 50 @ 1A, 2V
Wide operating temperature range up to 150°C
Product Advantages
Robust and reliable performance
Suitable for high power and high voltage applications
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 100V
Collector Current (Max): 3A
Collector Cutoff Current (Max): 100nA
DC Current Gain (Min): 50 @ 1A, 2V
Transition Frequency: 100MHz
Quality and Safety Features
Compliant with Automotive AEC-Q101 standard
RoHS status not applicable
Compatibility
Suitable for surface mount applications
Application Areas
Automotive electronics
Industrial power and control systems
Consumer electronics
Product Lifecycle
Currently in production
No indications of discontinuation
Key Reasons to Choose This Product
Robust and reliable performance for high power and high voltage applications
Compact surface mount package
Automotive-grade quality and reliability
Wide operating temperature range