Manufacturer Part Number
BDP949H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
5 Watt Power Capability
60V Collector-Emitter Breakdown Voltage
3A Collector Current Rating
100MHz Transition Frequency
High DC Current Gain (hFE) of 100 Min.
Low Saturation Voltage of 500mV @ 200mA, 2A
Product Advantages
Compact Surface Mount Package
RoHS3 Compliant
Wide Operating Temperature Range up to 150°C
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 3A
Collector Cutoff Current (Max): 100nA
Saturation Voltage: 500mV @ 200mA, 2A
DC Current Gain (hFE): 100 Min. @ 500mA, 1V
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Temperature Environments up to 150°C
Compatibility
Compatible with TO-261-4, TO-261AA Packages
Application Areas
Power Amplifiers
Switching Regulators
Motor Drives
Industrial Control Circuits
Product Lifecycle
Active Product
Replacements and Upgrades Available
Key Reasons to Choose This Product
High Power Capability (5W)
Wide Voltage and Current Ratings
Fast Switching Performance (100MHz)
Robust Design for High-Temperature Applications
RoHS3 Compliance for Environmental Sustainability
Compact Surface Mount Package for Space-Constrained Designs
BDP948H6327INEINEON