Manufacturer Part Number
BCR166E6327
Manufacturer
Infineon Technologies
Introduction
Pre-biased PNP bipolar junction transistor (BJT)
Suitable for switching and amplifier applications
Product Features and Performance
Maximum power dissipation of 200 mW
Collector-emitter breakdown voltage up to 50 V
Collector current up to 100 mA
Collector cutoff current of 100 nA (max)
Low collector-emitter saturation voltage of 300 mV (max)
Current gain (hFE) of 70 (min) at 5 mA, 5 V
Transition frequency of 160 MHz
Product Advantages
Pre-biased design for simplified circuit implementation
Small package size for compact designs
Good electrical performance characteristics
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 500 μA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5 mA, 5 V
Frequency Transition: 160 MHz
Resistor Base (R1): 4.7 kOhms
Resistor Emitter Base (R2): 47 kOhms
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package (PG-SOT23-3-11)
Application Areas
Switching and amplifier circuits
Low-power electronic devices
Product Lifecycle
Currently available, not nearing discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Simplified circuit design with pre-biased configuration
Compact surface mount package for space-constrained applications
Reliable electrical performance with high breakdown voltage, low saturation voltage, and good current gain
RoHS3 compliance for environmental safety
