Manufacturer Part Number
BCR162E6327
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Single pre-biased bipolar junction transistor (BJT)
Product Features and Performance
RoHS3 compliant
200 MHz transition frequency
Voltage: Collector-Emitter breakdown up to 50V
Current: Collector up to 100mA, Collector cutoff up to 100nA
Saturation voltage: 300mV @ 500μA, 10mA
DC current gain: Minimum 20 @ 5mA, 5V
On-chip base and emitter resistors: 4.7kΩ each
Product Advantages
Pre-biased for easy use
Compact SOT-23-3 surface mount package
Automotive-grade AEC-Q101 qualified
Key Technical Parameters
Power rating: 200mW
Package: PG-SOT23-3-3 (TO-236-3, SC-59)
Series: Automotive, AEC-Q101 qualified
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Suitable for various electronic circuits and applications
Application Areas
Automotive electronics
Industrial controls
Consumer electronics
Product Lifecycle
Current production part, no discontinuation planned
Replacements and upgrades may be available
Key Reasons to Choose This Product
Compact pre-biased BJT in space-saving SMD package
Robust automotive-grade quality and performance
Suitable for a wide range of electronic applications
Readily available as a current production part
