Manufacturer Part Number
BCR158E6327
Manufacturer
Infineon Technologies
Introduction
High frequency pre-biased PNP transistor
Product Features and Performance
High frequency operation up to 200 MHz
Low collector-emitter saturation voltage
Tight beta control
Automotive grade AEC-Q101 qualified
Product Advantages
Improved circuit design and performance
Reduced power consumption
Reliable operation in automotive applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 500 μA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5 mA, 5 V
Frequency Transition: 200 MHz
Resistor Base (R1): 2.2 kOhms
Resistor Emitter Base (R2): 47 kOhms
Quality and Safety Features
RoHS3 compliant
Automotive grade AEC-Q101 qualified
Compatibility
Surface mount package PG-SOT23-3-1
Application Areas
Automotive electronics
Analog and digital circuits
Switching and amplifier applications
Product Lifecycle
Current model, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
High frequency performance up to 200 MHz
Low saturation voltage for improved efficiency
Tight beta control for consistent performance
Automotive grade qualification for reliable operation
Surface mount package for easy integration
