BC857SH6327 - Infineon Technologies

Manufacturer Part Number

BC857SH6327

Manufacturer

Infineon Technologies

Introduction

This product is a dual PNP bipolar junction transistor (BJT) array. It is a discrete semiconductor device designed for a wide range of electronic applications.

Product Features and Performance

Dual PNP transistor configuration

High frequency operation up to 250MHz

Low collector-emitter saturation voltage

High DC current gain

Low collector cutoff current

Wide operating temperature range up to 150°C

Product Advantages

Compact surface mount package

High performance in a small footprint

Suitable for high-frequency circuit designs

Reliable operation in demanding environments

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 45V

Collector Current (Max): 100mA

Power Dissipation (Max): 250mW

DC Current Gain (Min): 200 @ 2mA, 5V

Transition Frequency: 250MHz

Quality and Safety Features

Manufactured by Infineon Technologies, a leading semiconductor company

Meets industry standards for quality and reliability

RoHS compliant for environmentally-friendly use

Compatibility

Compatible with a wide range of electronic circuits and systems

Suitable for use in various applications, including amplifiers, switches, and logic gates

Application Areas

Analog and digital circuit design

Portable electronics

Automotive electronics

Industrial control systems

Telecommunications equipment

Product Lifecycle

This product is an active and widely used device

Replacements and upgrades may be available from Infineon or other manufacturers

Key Reasons to Choose This Product

High-performance dual PNP transistor in a compact surface mount package

Suitable for high-frequency circuit designs

Reliable operation in a wide temperature range

Manufactured by a leading semiconductor company with a reputation for quality and reliability

Compatibility with a wide range of electronic applications