Manufacturer Part Number
BC857SE6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Array
Product Features and Performance
2 PNP Transistors in a Single Package
Operates at up to 150°C Junction Temperature
Power Rating of 250mW
Collector-Emitter Breakdown Voltage up to 45V
Collector Current up to 100mA
Very Low Collector Cutoff Current of 15nA
Saturation Voltage of 650mV @ 5mA, 100mA Collector Current
DC Current Gain (hFE) of 200 @ 2mA, 5V Collector-Emitter Voltage
Transition Frequency of 250MHz
Product Advantages
Compact 6-Pin Surface Mount Package
ROHS3 Compliant
Suitable for a Variety of Electronic Circuits and Applications
Key Technical Parameters
Package: 6-VSSOP, SC-88, SOT-363
Operating Temperature: 150°C (TJ)
Power Rating: 250mW
Collector-Emitter Breakdown Voltage: 45V
Collector Current: 100mA
Collector Cutoff Current: 15nA
Saturation Voltage: 650mV @ 5mA, 100mA Collector Current
DC Current Gain (hFE): 200 @ 2mA, 5V Collector-Emitter Voltage
Transition Frequency: 250MHz
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Technology (SMT) Assembly
Application Areas
Suitable for a Wide Range of Electronic Circuits and Applications
Product Lifecycle
Current Production
Several Key Reasons to Choose This Product
Compact 6-Pin Surface Mount Package for Space-Constrained Designs
High Power Rating of 250mW
High Voltage Capability up to 45V
High Current Handling up to 100mA
Very Low Collector Cutoff Current of 15nA
High DC Current Gain (hFE) of 200
High Transition Frequency of 250MHz
ROHS3 Compliant for Environmental Compliance
Suitable for a Wide Range of Electronic Circuits and Applications
BC857TFreescale / NXP Semiconductors