BC857BE6327 - Infineon Technologies

Manufacturer Part Number

BC857BE6327

Manufacturer

Infineon Technologies

Introduction

This is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is a single transistor device designed for general-purpose applications.

Product Features and Performance

Operating temperature range up to 150°C

Power rating of 330 mW

Collector-emitter breakdown voltage up to 45 V

Collector current up to 100 mA

Collector cutoff current of 15 nA

Saturation voltage of 650 mV at 5 mA/100 mA collector current

DC current gain of at least 220 at 2 mA/5 V collector current

Transition frequency of 250 MHz

Product Advantages

Suitable for general-purpose amplifier and switch applications

Small surface-mount package for compact designs

Reliable and robust performance in a wide temperature range

Key Technical Parameters

Package: PG-SOT23, TO-236-3, SC-59, SOT-23-3

Transistor Type: PNP

Power Rating: 330 mW

Voltage Rating: 45 V

Current Rating: 100 mA

Frequency Response: 250 MHz

Quality and Safety Features

Manufactured by the reputable Infineon Technologies

Designed and tested to meet industry standards for quality and reliability

Compatibility

This transistor can be used as a replacement or alternative to similar PNP BJT devices in various electronic circuits and applications.

Application Areas

General-purpose amplifier and switch applications

Low-power audio and control circuits

Consumer electronics, industrial, and telecommunication equipment

Product Lifecycle

This is an active and widely available product from Infineon Technologies.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Reliable and robust performance in a wide temperature range

Suitable for a variety of general-purpose amplifier and switch applications

Small surface-mount package for space-constrained designs

Manufactured by the reputable Infineon Technologies for quality and reliability