BC857BDW1T1G - onsemi

Manufacturer Part Number

BC857BDW1T1G

Manufacturer

onsemi

Introduction

Dual PNP Bipolar Junction Transistor (BJT) Array

Product Features and Performance

Capable of handling up to 100mA of collector current

Breakdown voltage of up to 45V between collector and emitter

Collector cutoff current of only 15nA maximum

Transition frequency of 100MHz

Low collector-emitter saturation voltage of 650mV maximum at 5mA/100mA

Product Advantages

Compact 6-pin SC-88/SOT-363 surface mount package

High current and voltage handling capability

Low leakage current

High transitional frequency for high-speed switching applications

Low saturation voltage for efficient power transfer

Key Technical Parameters

Operating temperature range: -55°C to 150°C

Power dissipation: 380mW maximum

Collector-emitter breakdown voltage: 45V maximum

Collector current: 100mA maximum

Collector cutoff current: 15nA maximum

DC current gain: 220 minimum at 2mA/5V

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Compatible with a wide range of electronic circuits and applications that require high-performance dual PNP bipolar junction transistors.

Application Areas

Analog and digital circuit designs

Amplifier and switching circuits

Power management systems

Industrial control and automation equipment

Product Lifecycle

This product is currently in production and available for purchase. Onsemi provides ongoing support and availability for this part number, and there are no plans for discontinuation in the near future.

Key Reasons to Choose This Product

Excellent current and voltage handling capabilities

Low leakage current and high transition frequency for fast switching

Compact surface mount packaging for efficient board layout

RoHS3 compliance and ISO-certified manufacturing for quality assurance

Widespread compatibility and suitability for a variety of electronic applications