BC848CE6327 - Infineon Technologies

Manufacturer Part Number

BC848CE6327

Manufacturer

Infineon Technologies

Introduction

The BC848CE6327 is a discrete semiconductor transistor in the NPN bipolar junction transistor (BJT) category.

Product Features and Performance

High-frequency transistor with a transition frequency of 250 MHz

High current gain (hFE) of at least 420 at 2 mA and 5 V

Low collector-emitter saturation voltage of 600 mV at 5 mA and 100 mA

Low collector cutoff current of 15 nA maximum

330 mW power dissipation capability

Operating temperature up to 150°C

Product Advantages

Suitable for high-frequency amplifier and switching applications

Small surface-mount package (TO-236-3, SC-59, SOT-23-3)

RoHS3 compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 15 nA

DC Current Gain (hFE): 420 minimum

Quality and Safety Features

Manufactured in compliance with RoHS3 directive

Reliable and robust design for long-term performance

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

High-frequency amplifiers

Switching circuits

General-purpose electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

High-frequency performance with excellent current gain and low saturation voltage

Compact surface-mount package suitable for space-constrained designs

Robust and reliable construction with RoHS3 compliance

Suitable for a variety of electronic applications