Manufacturer Part Number
BC848CDW1T1G
Manufacturer
onsemi
Introduction
The BC848CDW1T1G is a dual NPN bipolar junction transistor (BJT) array from onsemi. It is designed for various electronic applications that require high-performance, low-noise, and space-efficient transistor solutions.
Product Features and Performance
Dual NPN transistor architecture
High frequency transition of 100MHz
Low collector-emitter saturation voltage of 600mV at 5mA/100mA
High DC current gain (hFE) of 420 at 2mA/5V
Low collector cutoff current of 15nA (ICBO)
Wide operating temperature range of -55°C to 150°C
Compact 6-TSSOP, SC-88, and SOT-363 package options
Product Advantages
Space-efficient dual transistor design
High frequency performance for high-speed applications
Low noise and low saturation voltage for improved efficiency
Wide temperature range for use in diverse environments
Multiple packaging options for flexible integration
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 30V
Current Collector (Ic) (Max): 100mA
Power Max: 380mW
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 compliant for environmental sustainability
Reliable performance and long lifespan
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Amplifiers
Switches
Logic gates
Drivers
General-purpose electronic circuits
Product Lifecycle
Current production model
Replacement and upgrade options available
Several Key Reasons to Choose This Product
High-performance dual transistor solution
Compact and space-efficient design
Low noise and high efficiency
Wide temperature range for versatile applications
Multiple packaging options for design flexibility
Reliable and environmentally-friendly RoHS3 compliance