BAR6405WH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BAR6405WH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

RF PIN diode with a common cathode configuration used for high-frequency switching and attenuation applications

Product Features and Performance

Diode Type: PIN - 1 Pair Common Cathode

Voltage - Peak Reverse (Max): 150V

Current - Max: 100 mA

Capacitance: 0.35pF at 20V, 1MHz

Resistance: 1.35Ohm at 100mA, 100MHz

Power Dissipation: 250 mW

Operating Temperature: Up to 150°C (TJ)

Package / Case: SC-70, SOT-323

Low insertion loss

High linearity

Fast switching speed

Product Advantages

Optimized for RF switching and attenuation

Designed for high reliability and durability

Low capacitance and resistance for efficient operation

High power handling capability

Key Technical Parameters

Max Reverse Voltage: 150V

Max Current: 100 mA

Capacitance: 0.35pF

Resistance: 1.35Ohm

Max Power Dissipation: 250 mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

Robust SC-70, SOT-323 package

Operational stability over a wide temperature range

Compliant with industry safety and quality standards

Compatibility

Suitable for use with high-frequency circuits and RF applications

Common cathode configuration for ease of integration

Application Areas

RF switching

Attenuation circuits

High-frequency signal processing

Wireless communication systems

Product Lifecycle

Active

Not indicated as nearing discontinuation

Replacements or upgrades should be assessed with respect to infineon's product roadmap

Several Key Reasons to Choose This Product

High reverse voltage capability suitable for various RF applications

Compact SC-70, SOT-323 packaging for space-critical designs

High linearity ensures minimal signal distortion

Effective power dissipation for reliable continuous operation

Stable performance across a broad temperature spectrum

Infineon Technologies' reputation for quality and innovation in semiconductor manufacturing