BAR6402VH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BAR6402VH6327XTSA1

Manufacturer

infineon-technologies

Introduction

The BAR6402VH6327XTSA1 is a single PIN diode designed for RF switching and attenuator applications where high performance and reliability are critical.

Product Features and Performance

Diode Type: PIN Single

Power Dissipation up to 250 mW

Supports high peak reverse voltage up to 150V

Can handle currents up to 100 mA

Low capacitance of 0.35pF at 20V

Resistance as low as 1.35Ohm at 100 mA

High operating temperature capabilities up to 150°C (TJ)

Product Advantages

Optimized for fast switching and high isolation performances in RF applications

Designed for durability and stability under high voltage operation

Enhances system reliability due to low power consumption and heat generation

Key Technical Parameters

Voltage Peak Reverse (Max): 150V

Current Max: 100 mA

Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz

Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max): 250 mW

Quality and Safety Features

Operates reliably at junction temperatures up to 150°C

Compliant with industry safety and quality standards for RF diodes

Compatibility

SC-79, SOD-523 packaging compatible with standard automated assembly lines

Can be integrated into a wide range of RF circuit designs

Application Areas

RF switch

RF attenuators

Radio communications

High-frequency digital communication systems

Product Lifecycle

Current product status: Active

Expected to maintain support and production, without nearing discontinuation soon

Several Key Reasons to Choose This Product

High reliability and stability in high-frequency operations

Superior power handling capability which ensures minimal signal distortion

Advanced material technology provides lower loss and better signal integrity

Rugged package design suitable for high temperature operational environments

High-performance characteristics make it a leading choice for demanding RF applications