Manufacturer Part Number
BAR6402VH6327XTSA1
Manufacturer
infineon-technologies
Introduction
The BAR6402VH6327XTSA1 is a single PIN diode designed for RF switching and attenuator applications where high performance and reliability are critical.
Product Features and Performance
Diode Type: PIN Single
Power Dissipation up to 250 mW
Supports high peak reverse voltage up to 150V
Can handle currents up to 100 mA
Low capacitance of 0.35pF at 20V
Resistance as low as 1.35Ohm at 100 mA
High operating temperature capabilities up to 150°C (TJ)
Product Advantages
Optimized for fast switching and high isolation performances in RF applications
Designed for durability and stability under high voltage operation
Enhances system reliability due to low power consumption and heat generation
Key Technical Parameters
Voltage Peak Reverse (Max): 150V
Current Max: 100 mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250 mW
Quality and Safety Features
Operates reliably at junction temperatures up to 150°C
Compliant with industry safety and quality standards for RF diodes
Compatibility
SC-79, SOD-523 packaging compatible with standard automated assembly lines
Can be integrated into a wide range of RF circuit designs
Application Areas
RF switch
RF attenuators
Radio communications
High-frequency digital communication systems
Product Lifecycle
Current product status: Active
Expected to maintain support and production, without nearing discontinuation soon
Several Key Reasons to Choose This Product
High reliability and stability in high-frequency operations
Superior power handling capability which ensures minimal signal distortion
Advanced material technology provides lower loss and better signal integrity
Rugged package design suitable for high temperature operational environments
High-performance characteristics make it a leading choice for demanding RF applications
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