Manufacturer Part Number
BAR63-05E6327
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Diode RF category
Product Features and Performance
PG-SOT23 package
TO-236-3, SC-59, SOT-23-3 package/case
PG-SOT23 supplier device package
Bulk package
150°C (TJ) operating temperature
250 mW maximum power dissipation
3 pF capacitance @ 5V, 1 MHz
50V maximum peak reverse voltage
PIN 1 Pair Common Cathode diode type
100 mA maximum current
Product Advantages
Compact and efficient design
Wide operating temperature range
Excellent high-frequency performance
Key Technical Parameters
Package type: PG-SOT23, TO-236-3, SC-59, SOT-23-3
Operating temperature: 150°C (TJ)
Power dissipation: 250 mW
Capacitance: 0.3 pF @ 5V, 1 MHz
Peak reverse voltage: 50V
Diode type: PIN 1 Pair Common Cathode
Maximum current: 100 mA
Quality and Safety Features
Reliable and durable construction
Compliance with industry standards
Compatibility
Widely compatible with various electronic circuits and systems
Application Areas
Suitable for high-frequency applications
Applicable in RF amplifiers, mixers, and other RF circuits
Product Lifecycle
Currently available product
No discontinuation or end-of-life information provided
Key Reasons to Choose This Product
Compact and efficient design
Wide operating temperature range
Excellent high-frequency performance
Reliable and durable construction
Compatibility with various electronic circuits and systems
BAR63-06