Manufacturer Part Number
BAR63-03WE6327
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor diode that belongs to the RF diode category.
Product Features and Performance
Operates at a maximum junction temperature of 150°C
Capable of dissipating up to 250 mW of power
Has a capacitance of 0.3 pF at 5V, 1 MHz
Supports a maximum peak reverse voltage of 50V
Classified as a single PIN diode type
Can handle a maximum current of 100 mA
Product Advantages
Reliable and robust performance under high-temperature conditions
Efficient power handling capabilities
Low capacitance for high-frequency applications
Wide voltage range support
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 250 mW
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage Peak Reverse (Max): 50V
Diode Type: PIN Single
Current Max: 100 mA
Quality and Safety Features
Manufactured by a reputable semiconductor company, Infineon Technologies
Rigorous quality control and testing procedures to ensure product reliability
Compatibility
Suitable for a wide range of RF and high-frequency applications
Application Areas
RF amplifiers, mixers, and switches
Phase shifters, attenuators, and limiters
Semiconductor test and measurement equipment
Product Lifecycle
This product is an active and widely-used discrete semiconductor diode
Replacements and upgrades are readily available from Infineon Technologies and other manufacturers
Several Key Reasons to Choose This Product
Reliable and robust performance under high-temperature conditions
Efficient power handling capabilities for demanding applications
Low capacitance for high-frequency circuit design
Wide voltage range support for diverse application requirements
Manufactured by a reputable semiconductor company, Infineon Technologies, ensuring quality and reliability
BAR63-03WSiemens