Manufacturer Part Number
2EDS8165HXUMA2
Manufacturer
Infineon Technologies
Introduction
The 2EDS8165HXUMA2 is a high-performance, low-side and high-side N-channel and P-channel MOSFET gate driver from Infineon Technologies. It is designed to drive high-speed power switches in various power conversion applications.
Product Features and Performance
Dual independent gate drivers with separate inputs and outputs
Peak output current of 1A source, 2A sink
Fast rise/fall times of 6.5ns/4.5ns (typical)
Wide supply voltage range of 20V
Logic input voltage range of 1.65V
Operating temperature range of -40°C to 125°C
Surface mount package (16-SOIC)
Product Advantages
Efficient power conversion with high-speed switching
Reliable and robust design for demanding applications
Flexible configuration with independent gate driver channels
Easy integration and system-level optimization
Key Reasons to Choose This Product
Optimized for high-efficiency power conversion
Proven reliability and performance in a wide range of applications
Versatile and flexible gate driver solution
Cost-effective and space-saving surface mount package
Quality and Safety Features
Robust design and protection features for reliable operation
Compliant with industry safety and quality standards
Compatibility
Suitable for driving a variety of power MOSFET and IGBT devices
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Industrial and automotive power electronics
Renewable energy systems
Other high-frequency power conversion applications
Product Lifecycle
The 2EDS8165HXUMA2 is an active product. There are equivalent or alternative models available from Infineon Technologies, such as the 2EDS8165HXUMA1 and 2EDS8162HXUMA2. Customers are advised to contact our website's sales team for more information on available options and product lifecycle status.