2EDN8523FXTMA1 - Infineon

Manufacturer Part Number

2EDN8523FXTMA1

Manufacturer

Infineon Technologies

Introduction

The 2EDN8523FXTMA1 is a high-performance, dual-channel gate driver IC from Infineon Technologies. It is designed to provide efficient and reliable control for low-side N-channel MOSFET power switches in a wide range of power management applications.

Product Features and Performance

Dual independent gate driver channels

5A peak source/sink current capability

Wide 4.5V to 20V supply voltage range

Low input voltage logic levels (1.2V/1.9V)

Fast rise/fall times (5.3ns/4.5ns)

Operating temperature range of -40°C to 150°C

Surface mount package (8-SOIC)

Product Advantages

Excellent efficiency and power density

Robust and reliable performance

Flexible and versatile design

Suitable for a wide range of applications

Key Reasons to Choose This Product

Optimized for high-efficiency power conversions

Reliable and robust design for demanding environments

Ease of integration with various control systems

Cost-effective solution for power management applications

Quality and Safety Features

Stringent quality control and testing

Compliance with industry safety standards

Robust overcurrent and thermal protection mechanisms

Compatibility

Suitable for use with a wide range of N-channel MOSFET power switches

Application Areas

Switching power supplies

Motor drives

Inverters and converters

Industrial automation and control systems

Product Lifecycle

The 2EDN8523FXTMA1 is an active product and is currently in production. Infineon Technologies maintains a comprehensive portfolio of gate driver ICs, and there are several equivalent or alternative models available. Customers are advised to contact our website's sales team for the most up-to-date information on product availability and potential alternatives.