Manufacturer Part Number
MAX2602ESA
Manufacturer
Maxim Integrated
Introduction
High-frequency NPN bipolar transistor for RF and microwave applications
Product Features and Performance
1 GHz transition frequency
6 dB gain
3 dB noise figure at 836 MHz
Supports up to 1.2 A collector current
15 V collector-emitter breakdown voltage
4 W maximum power dissipation
Operates at temperatures up to 150°C
Product Advantages
High-frequency performance for RF and microwave applications
Robust design with high voltage and current ratings
Suitable for surface mount assembly
Key Technical Parameters
Transistor type: NPN
DC current gain (hFE): 100 min @ 250 mA, 3 V
Frequency Transition: 1 GHz
Gain: 11.6 dB
Noise Figure: 3.3 dB @ 836 MHz
Power Dissipation: 6.4 W
Collector-Emitter Breakdown Voltage: 15 V
Collector Current (max): 1.2 A
Quality and Safety Features
RoHS3 compliant
8-SOIC-EP package with exposed pad for improved thermal performance
Compatibility
Surface mount assembly
Application Areas
RF and microwave amplifier circuits
Wireless communication systems
Radar and satellite communication
Product Lifecycle
This product is an active, in-production part from Maxim Integrated. No discontinuation or replacement information is available.
Key Reasons to Choose This Product
High-frequency performance for RF and microwave applications
Robust design with high voltage and current ratings
Low noise figure for improved signal-to-noise ratio
Suitable for surface mount assembly
RoHS3 compliant for environmentally-friendly use