MAX2602ESA - Analog Devices Inc./Maxim Integrated

Manufacturer Part Number

MAX2602ESA

Manufacturer

Maxim Integrated

Introduction

High-frequency NPN bipolar transistor for RF and microwave applications

Product Features and Performance

1 GHz transition frequency

6 dB gain

3 dB noise figure at 836 MHz

Supports up to 1.2 A collector current

15 V collector-emitter breakdown voltage

4 W maximum power dissipation

Operates at temperatures up to 150°C

Product Advantages

High-frequency performance for RF and microwave applications

Robust design with high voltage and current ratings

Suitable for surface mount assembly

Key Technical Parameters

Transistor type: NPN

DC current gain (hFE): 100 min @ 250 mA, 3 V

Frequency Transition: 1 GHz

Gain: 11.6 dB

Noise Figure: 3.3 dB @ 836 MHz

Power Dissipation: 6.4 W

Collector-Emitter Breakdown Voltage: 15 V

Collector Current (max): 1.2 A

Quality and Safety Features

RoHS3 compliant

8-SOIC-EP package with exposed pad for improved thermal performance

Compatibility

Surface mount assembly

Application Areas

RF and microwave amplifier circuits

Wireless communication systems

Radar and satellite communication

Product Lifecycle

This product is an active, in-production part from Maxim Integrated. No discontinuation or replacement information is available.

Key Reasons to Choose This Product

High-frequency performance for RF and microwave applications

Robust design with high voltage and current ratings

Low noise figure for improved signal-to-noise ratio

Suitable for surface mount assembly

RoHS3 compliant for environmentally-friendly use