MAX2602ESA+ - Analog Devices Inc./Maxim Integrated

Manufacturer Part Number

MAX2602ESA+

Manufacturer

Maxim Integrated

Introduction

High-performance NPN bipolar transistor for RF and microwave applications

Product Features and Performance

Operates up to 6.4W of power

Breakdown voltage of up to 15V

Maximum collector current of 1.2A

High transition frequency of 1GHz

High current gain of 100 @ 250mA, 3V

Low noise figure of 3.3dB @ 836MHz

6dB of power gain

Product Advantages

Suitable for high-frequency, high-power RF and microwave applications

Excellent noise and gain characteristics

Robust performance under high temperature conditions up to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (BVCEO): 15V

Collector Current (IC): 1.2A

DC Current Gain (hFE): 100 @ 250mA, 3V

Transition Frequency (fT): 1GHz

Noise Figure: 3.3dB @ 836MHz

Power Gain: 11.6dB

Quality and Safety Features

RoHS3 compliant

8-SOIC-EP package with exposed pad for enhanced thermal performance

Compatibility

Suitable for a wide range of RF and microwave applications

Application Areas

RF power amplifiers

Wireless communications equipment

Radar systems

Satellite communications

Industrial and commercial electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

High-performance, high-power capabilities

Excellent noise and gain characteristics for RF and microwave applications

Robust operation at high temperatures up to 150°C

RoHS3 compliance for environmental sustainability

Compact 8-SOIC-EP package with exposed pad for thermal management