Manufacturer Part Number
DS1230Y-120IND
Manufacturer
Analog Devices
Introduction
The DS1230Y-120IND is a non-volatile SRAM (NVSRAM) device that combines the benefits of SRAM and EEPROM in a single chip. It provides a compact, low-power, and high-speed solution for data storage applications that require both volatile and non-volatile memory.
Product Features and Performance
256Kbit of NVSRAM organized as 32K x 8
Parallel memory interface
120ns write cycle time and 120ns access time
5V to 5.5V supply voltage
Operating temperature range of -40°C to 85°C
Through-hole 28-DIP package
Product Advantages
Seamless transition between volatile and non-volatile memory modes
Eliminates the need for battery-backed SRAM or separate EEPROM devices
Provides instant-on capabilities and data retention during power loss
Supports frequent write cycles without wearing out the memory
Key Reasons to Choose This Product
Reliable and robust non-volatile memory solution
Versatile for a wide range of data storage applications
Low power consumption and compact package
Easy integration and compatibility with existing systems
Quality and Safety Features
Rigorous quality control and testing
Compliance with industry standards and regulations
Compatibility
The DS1230Y-120IND is compatible with a variety of microcontrollers, embedded systems, and other electronic devices that require non-volatile memory.
Application Areas
Industrial automation and control systems
Instrumentation and measurement equipment
Portable and battery-powered devices
Automotive and transportation applications
Telecommunications and networking equipment
Product Lifecycle
The DS1230Y-120IND is an obsolete product, meaning it has been discontinued by the manufacturer. However, there are equivalent and alternative models available from Analog Devices that can be considered as replacements. Customers are advised to contact our website's sales team for more information on the available options and to determine the best solution for their specific requirements.