Manufacturer Part Number
DS1230Y-120+
Manufacturer
Analog Devices
Introduction
The DS1230Y-120+ is a 256Kbit non-volatile static random-access memory (NVSRAM) device. It combines the best features of SRAM and EEPROM, providing non-volatile storage with SRAM-like performance and interface.
Product Features and Performance
256Kbit (32K x 8) of non-volatile SRAM storage
Parallel memory interface
120ns write cycle time and 120ns access time
5V to 5.5V operating voltage
0°C to 70°C operating temperature range
Through-hole 28-DIP package
Product Advantages
Seamless transition between volatile and non-volatile memory
Reliable data retention without battery backup
Fast read and write speeds compared to EEPROM
Simple parallel memory interface
Key Reasons to Choose This Product
Ideal for applications requiring non-volatile memory with SRAM-like performance
Excellent choice for industrial, medical, and other embedded systems
Provides a cost-effective solution for data storage and protection
Quality and Safety Features
Robust design and manufacturing process to ensure long-term reliability
Compliant with relevant industry standards for safety and quality
Compatibility
Compatible with a wide range of microcontrollers and processors with parallel memory interfaces
Application Areas
Industrial automation and control systems
Medical equipment
Telecommunications equipment
Automotive electronics
General embedded systems requiring non-volatile data storage
Product Lifecycle
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DS1230WP-100+
DS1230WP-100Analog Devices / Maxim Integrated