MX0912B351Y - Ampleon USA Inc.

Manufacturer Part Number

MX0912B351Y

Manufacturer

Ampleon

Introduction

The MX0912B351Y is a high-performance bipolar junction transistor (BJT) designed for radio frequency (RF) applications.

Product Features and Performance

Capable of operating at high temperatures up to 200°C

Handles high power of up to 960W

Breakdown voltage of up to 20V between collector and emitter

Maximum collector current of 21A

Transition frequency of 1.215GHz

Power gain of 8dB

Product Advantages

Robust design for reliable operation in demanding RF applications

Able to handle high power and voltage levels

Wide operating temperature range

Suitable for chassis mount installation

Key Technical Parameters

Power Rating: 960W

Collector-Emitter Breakdown Voltage: 20V

Collector Current: 21A

Transition Frequency: 1.215GHz

Power Gain: 8dB

Quality and Safety Features

Designed to meet safety and quality standards for RF applications

Compatibility

Suitable for use in a wide range of RF circuits and systems

Application Areas

RF power amplifiers

Radio transmitters

Wireless communications equipment

Industrial RF applications

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Robust and reliable performance in high-power, high-temperature RF applications

Able to handle high voltage and current levels

Wide operating temperature range

Suitable for chassis mount installation

Proven track record in various RF applications