BFR182WH6327XTSA1 - Infineon Technologies

Manufacturer Part Number

BFR182WH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

Infineon's BFR182WH6327XTSA1 is a high-frequency, low-noise NPN bipolar transistor designed for use in RF and microwave applications.

Product Features and Performance

Optimized for use in RF/microwave circuits

Excellent high-frequency performance with a transition frequency of 8GHz

High gain of 19dB

Low noise figure of 0.9dB to 1.3dB across the 900MHz to 1.8GHz frequency range

Product Advantages

High-frequency operation

Low noise characteristics

Compact surface-mount packaging

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 12V

Collector Current (IC): 35mA

Power Dissipation: 250mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Packaged in PG-SOT323 surface-mount package

Compatibility

Compatible with a wide range of RF and microwave circuit designs.

Application Areas

RF and microwave amplifiers

Wireless communication systems

Satellite communication

Test and measurement equipment

Product Lifecycle

This product is currently in production and available. No discontinuation or end-of-life announcement has been made.

Key Reasons to Choose This Product

Excellent high-frequency performance with 8GHz transition frequency

Low noise figure for improved signal quality

Compact surface-mount packaging for efficient board layout

RoHS3 compliance for environmental responsibility

Broad compatibility with RF and microwave circuit designs