Manufacturer Part Number
CLF1G0060-10
Manufacturer
Ampleon
Introduction
High-performance GaN HEMT transistor for RF and microwave applications
Product Features and Performance
10W output power
16dB gain
Operating frequency up to 6GHz
150V rated voltage
50mA test current
50V test voltage
Product Advantages
GaN HEMT technology for high efficiency and power density
Robust and reliable performance
Suitable for a wide range of RF and microwave applications
Key Technical Parameters
Technology: GaN HEMT
Power Output: 10W
Current Test: 50mA
Voltage Rated: 150V
Gain: 16dB
Voltage Test: 50V
Frequency: 6GHz
Quality and Safety Features
RoHS3 compliant
Robust SOT-1227B package
Compatibility
Suitable for a variety of RF and microwave applications
Application Areas
Wireless infrastructure
Radar systems
Satellite communications
Medical equipment
Industrial applications
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High output power and efficiency with GaN HEMT technology
Wide operating frequency range up to 6GHz
Robust and reliable performance in a compact package
RoHS3 compliance for environmental responsibility