CLF1G0035-50 - Ampleon USA Inc.

Manufacturer Part Number

CLF1G0035-50

Manufacturer

Ampleon

Introduction

This is a GaN HEMT (High Electron Mobility Transistor) device from Ampleon, a leading manufacturer of RF power transistors and integrated circuits.

Product Features and Performance

50W output power

150 mA test current

150V rated voltage

5 dB gain

50V test voltage

3 GHz operating frequency

Product Advantages

High power density

Excellent efficiency

Wide bandwidth

Reliable GaN technology

Key Technical Parameters

Power Output: 50W

Current (Test): 150 mA

Voltage (Rated): 150 V

Gain: 11.5 dB

Voltage (Test): 50 V

Frequency: 3 GHz

Quality and Safety Features

RoHS3 compliant

Packaged in SOT467C

Compatibility

SOT467C package

Compatible with various RF and microwave applications

Application Areas

Suitable for use in RF power amplifiers, radar systems, and other high-frequency applications

Product Lifecycle

Currently available

No information on upcoming discontinuation or replacement

Key Reasons to Choose This Product

High power output

Excellent efficiency and bandwidth

Reliable GaN technology

Compact SOT467C packaging

Compliance with RoHS3 regulations