TIG067SS-TL-2W - onsemi

Manufacturer Part Number

TIG067SS-TL-2W

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor.

Product Features and Performance

Designed for high-power, high-frequency switching applications

Capable of handling up to 1.2W of power

Collector-emitter breakdown voltage of up to 400V

Very low on-state voltage drop (Vce(on) of 5V @ 4V, 150A)

High pulse current capability of up to 150A

Wide operating temperature range up to 150°C

Product Advantages

Excellent power handling and efficiency

Robust design for high-stress applications

Reliable performance across wide temperature range

Key Technical Parameters

Package: 8-SOIC (0.154", 3.90mm Width)

Operating Temperature: 150°C (TJ)

Power Handling: 1.2W

Collector-Emitter Breakdown Voltage: 400V

On-State Voltage Drop: 5V @ 4V, 150A

Pulse Current Capability: 150A

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

This IGBT transistor is compatible with a wide range of high-power, high-frequency switching applications.

Application Areas

Power supplies

Motor drives

Inverters

Industrial automation equipment

Renewable energy systems

Product Lifecycle

This product is an active, in-production device from onsemi. There are no known plans for discontinuation, and replacement or upgrade options may be available.

Key Reasons to Choose This Product

Excellent power handling and efficiency

Robust design for high-temperature and high-stress applications

Reliable and durable performance

Wide operating temperature range

Compatibility with a variety of high-power, high-frequency switching applications