Manufacturer Part Number
TIG056BF-1E
Manufacturer
onsemi
Introduction
IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Product Features and Performance
High power capacity of 30W
High voltage rating of 430V Collector-Emitter Breakdown Voltage
Low on-state voltage drop of 5V @ 15V, 240A
Fast switching speed with turn-on time of 46ns and turn-off time of 140ns
Product Advantages
Reliable and robust performance
Efficient power conversion
Suitable for high-power industrial applications
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Rating: 30W
Collector-Emitter Breakdown Voltage: 430V
On-state Voltage: 5V @ 15V, 240A
Switching Times: 46ns (turn-on), 140ns (turn-off)
Quality and Safety Features
RoHS3 Compliant
TO-220F-3FS package for reliable thermal management
Compatibility
Compatible with various industrial power electronics systems
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current product model, no discontinuation or replacement plans
Several Key Reasons to Choose This Product
High power capacity and voltage rating for demanding applications
Low on-state voltage drop for efficient power conversion
Fast switching speeds for improved system performance
Reliable and robust design for industrial environments
RoHS3 compliance for environmental responsibility