Manufacturer Part Number
SVD5867NLT4G
Manufacturer
onsemi
Introduction
The SVD5867NLT4G is a discrete N-channel power MOSFET transistor in a DPAK-3 package from onsemi.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
39mOhm On-Resistance (Rds(on)) at 11A, 10V
22A Continuous Drain Current (Id) at 25°C
675pF Input Capacitance (Ciss) at 25V
3W Power Dissipation at 25°C (Ta), 43W at 25°C (Tc)
-55°C to 175°C Operating Temperature Range
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Wide operating temperature range
Suitable for switching and power management applications
Key Technical Parameters
N-Channel MOSFET Technology
5V Gate-Source Threshold Voltage (Vgs(th)) at 250uA
5V/10V Drive Voltage for Max/Min On-Resistance
15nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
DPAK-3 Surface Mount Package
Compatibility
Designed for use in power management, switching, and control applications
Application Areas
Switching Power Supplies
Motor Drives
Power Amplifiers
Industrial Controls
Product Lifecycle
Currently in active production
No plans for discontinuation at this time
Replacement or upgrade options may be available
Key Reasons to Choose this Product
Excellent performance characteristics (low Rds(on), high current rating)
Suitable for high-power, high-temperature applications
Compact surface mount DPAK-3 package
RoHS compliance for environmental sustainability
SVD5804NT4GAMI Semiconductor/onsemi