Manufacturer Part Number
SVD5865NLT4G
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Single transistor FET, MOSFET
Product Features and Performance
N-channel MOSFET
60V drain-to-source voltage
16mΩ maximum on-resistance
10A continuous drain current at 25°C
46A continuous drain current at case temperature
1400pF maximum input capacitance
1W maximum power dissipation at ambient temperature
71W maximum power dissipation at case temperature
-55°C to 175°C operating temperature range
Product Advantages
Suitable for automotive and industrial applications
Complies with AEC-Q101 standard
ROHS3 compliant
Key Technical Parameters
Drain-to-source voltage: 60V
Maximum gate-to-source voltage: ±20V
Threshold voltage: 2V maximum at 250A drain current
On-resistance: 16mΩ maximum at 19A drain current, 10V gate-to-source voltage
Input capacitance: 1400pF maximum at 25V drain-to-source voltage
Quality and Safety Features
DPAK-3 package
Tape and reel packaging
Compatibility
Surface mount device
Application Areas
Automotive electronics
Industrial power electronics
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Suitable for high-power, high-temperature applications
Meets automotive and industrial quality standards
Compact DPAK-3 package for space-constrained designs
Low on-resistance for efficient power conversion
Wide operating temperature range