Manufacturer Part Number
SGH80N60UFDTU
Manufacturer
onsemi
Introduction
High-power insulated-gate bipolar transistor (IGBT) designed for use in industrial and power conversion applications
Product Features and Performance
Capable of handling up to 195 watts of power
Breakdown voltage of up to 600 volts
Maximum collector current of 80 amps
Low on-state voltage drop of 2.6V @ 15V, 40A
Fast switching with a reverse recovery time of 95 ns
Gate charge of 175 nC
Pulsed collector current up to 220 amps
Switching energy of 570J on and 590J off
Product Advantages
Robust and reliable design for industrial applications
High-power handling capability
Fast switching for efficient power conversion
Low on-state voltage drop for reduced power losses
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Package: TO-3P-3, SC-65-3
Mounting type: Through hole
Quality and Safety Features
Designed and manufactured to high quality and safety standards
Compatibility
Widely compatible with industrial and power conversion equipment
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating systems
Product Lifecycle
This product is an active and ongoing part of onsemi's product lineup, with no plans for discontinuation in the near future.
Key Reasons to Choose This Product
High-power handling capability for demanding applications
Fast, efficient switching performance for improved system efficiency
Robust and reliable design for industrial environments
Wide operating temperature range for versatile use cases
Compatibility with a variety of industrial and power conversion equipment