Manufacturer Part Number
SGH40N60UFDTU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
RoHS3 Compliant
TO-3P Package
Operating Temperature: -55°C to 150°C (TJ)
Power Rating: 160W
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 40A
Collector-Emitter Saturation Voltage: 2.6V @ 15V, 20A
Reverse Recovery Time: 60ns
Gate Charge: 97nC
Pulsed Collector Current: 160A
Switching Energy: 160J (on), 200J (off)
Turn-on/off Delay Time: 15ns/65ns
Product Advantages
High power handling capacity
Low conduction and switching losses
Fast switching speed
Compact TO-3P package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 40A
Collector-Emitter Saturation Voltage: 2.6V @ 15V, 20A
Reverse Recovery Time: 60ns
Gate Charge: 97nC
Switching Energy: 160J (on), 200J (off)
Turn-on/off Delay Time: 15ns/65ns
Quality and Safety Features
RoHS3 Compliant
TO-3P Package
Operating Temperature: -55°C to 150°C (TJ)
Compatibility
Can be used in a variety of power electronics applications
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Other high-power switching applications
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available as needed
Key Reasons to Choose This Product
High power handling capacity
Low conduction and switching losses
Fast switching speed
Compact and reliable TO-3P package
Suitable for a wide range of high-power switching applications
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SGH23N60UFDTUonsemiIGBT 600V 23A 100W TO3P