Manufacturer Part Number
SDTC144EET1G
Manufacturer
onsemi
Introduction
This is an NPN pre-biased bipolar junction transistor (BJT) from onsemi's SDTC144 series, designed for automotive and other high-reliability applications.
Product Features and Performance
200 mW maximum power dissipation
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
500 nA maximum collector cutoff current
250 mV maximum collector-emitter saturation voltage at 10 mA collector current
80 minimum DC current gain at 5 mA collector current and 10 V collector-emitter voltage
Integrated 47 kOhm base and emitter-base resistors
Product Advantages
Pre-biased for stable operation
Automotive-grade AEC-Q101 qualification
Small SC-75, SOT-416 surface mount package
RoHS3 compliant
Key Technical Parameters
Power dissipation: 200 mW
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 500 nA
Collector-emitter saturation voltage: 250 mV
DC current gain: 80 minimum
Quality and Safety Features
AEC-Q101 automotive qualification
RoHS3 compliant
Compatibility
This transistor is compatible with a wide range of electronic circuits and systems, particularly in automotive and industrial applications.
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Switching and amplification applications
Product Lifecycle
The SDTC144EET1G is an active product with no immediate plans for discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Automotive-grade performance and reliability
Pre-biased design for stable operation
Small surface mount package
Integrated base and emitter-base resistors for simplified circuit design
RoHS3 compliance for environmental responsibility
