SDTC114EET1G - onsemi

Manufacturer Part Number

SDTC114EET1G

Manufacturer

onsemi

Introduction

The SDTC114EET1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi. It is designed for use in automotive and industrial applications.

Product Features and Performance

200 mW maximum power dissipation

50 V maximum collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

250 mV maximum collector-emitter saturation voltage at 10 mA collector current

35 minimum DC current gain at 5 mA collector current and 10 V collector-emitter voltage

10 kOhm base and emitter-base resistors

Product Advantages

Pre-biased for simplified circuit design

Automotive-grade AEC-Q101 qualified

Small SC-75, SOT-416 surface mount package

RoHS3 compliant

Key Technical Parameters

Power Dissipation: 200 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV

DC Current Gain: 35 minimum

Base Resistor: 10 kOhms

Emitter-Base Resistor: 10 kOhms

Quality and Safety Features

AEC-Q101 automotive qualification

RoHS3 compliant

Compatibility

Surface mount SC-75, SOT-416 package

Suitable for use in automotive and industrial applications

Application Areas

Automotive electronics

Industrial control and instrumentation

Power management circuits

Switching and amplifier applications

Product Lifecycle

This product is an active and available part from onsemi.

Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

Automotive-grade AEC-Q101 qualification for reliability

Small surface mount package for compact design

Pre-biased configuration for simplified circuit implementation

Wide breakdown voltage and current capabilities for versatile applications

Robust quality and safety features for critical systems