Manufacturer Part Number
SDTC114EET1G
Manufacturer
onsemi
Introduction
The SDTC114EET1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi. It is designed for use in automotive and industrial applications.
Product Features and Performance
200 mW maximum power dissipation
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
500 nA maximum collector cutoff current
250 mV maximum collector-emitter saturation voltage at 10 mA collector current
35 minimum DC current gain at 5 mA collector current and 10 V collector-emitter voltage
10 kOhm base and emitter-base resistors
Product Advantages
Pre-biased for simplified circuit design
Automotive-grade AEC-Q101 qualified
Small SC-75, SOT-416 surface mount package
RoHS3 compliant
Key Technical Parameters
Power Dissipation: 200 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 500 nA
Collector-Emitter Saturation Voltage: 250 mV
DC Current Gain: 35 minimum
Base Resistor: 10 kOhms
Emitter-Base Resistor: 10 kOhms
Quality and Safety Features
AEC-Q101 automotive qualification
RoHS3 compliant
Compatibility
Surface mount SC-75, SOT-416 package
Suitable for use in automotive and industrial applications
Application Areas
Automotive electronics
Industrial control and instrumentation
Power management circuits
Switching and amplifier applications
Product Lifecycle
This product is an active and available part from onsemi.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Automotive-grade AEC-Q101 qualification for reliability
Small surface mount package for compact design
Pre-biased configuration for simplified circuit implementation
Wide breakdown voltage and current capabilities for versatile applications
Robust quality and safety features for critical systems
