RFD16N05LSM9A - onsemi

Manufacturer Part Number

RFD16N05LSM9A

Manufacturer

onsemi

Introduction

This is an N-channel enhancement-mode MOSFET transistor from onsemi. It is a discrete semiconductor product designed for power switching and control applications.

Product Features and Performance

50V drain-source voltage rating

16A continuous drain current rating at 25°C

47mΩ maximum on-resistance at 16A, 5V

-55°C to 150°C operating temperature range

60W maximum power dissipation at 25°C

Product Advantages

Low on-resistance for high efficiency

High current and power handling capability

Wide operating temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 50V

Gate-Source Voltage (Vgs): ±10V

On-Resistance (Rds(on)): 47mΩ @ 16A, 5V

Drain Current (Id): 16A @ 25°C

Power Dissipation (Ptot): 60W @ 25°C

Gate Charge (Qg): 80nC @ 10V

Quality and Safety Features

RoHS3 compliant

TO-252AA (D-Pak) surface mount package

Compatibility

This MOSFET is compatible with a wide range of power electronics and control applications.

Application Areas

Power supplies

Motor drives

Switching regulators

General power switching and control

Product Lifecycle

This product is currently in production and is not nearing discontinuation. Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

High current and power handling capability

Low on-resistance for efficient operation

Wide operating temperature range

Compact surface mount package

RoHS compliance for environmental considerations