Manufacturer Part Number
RFD16N05LSM
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a transistor of the FET (Field-Effect Transistor) MOSFET (Metal-Oxide-Semiconductor FET) type.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 50V
Maximum Gate-Source Voltage (Vgs) of ±10V
On-State Resistance (Rds(on)) of 47mΩ @ 16A, 5V
Continuous Drain Current (Id) of 16A at 25°C
Maximum Power Dissipation of 60W at 25°C
Gate Charge (Qg) of 80nC @ 10V
Operating Temperature Range of -55°C to 150°C
Product Advantages
Low on-state resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Suitable for surface mount applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 50V
Gate-Source Voltage (Vgs): ±10V
On-State Resistance (Rds(on)): 47mΩ @ 16A, 5V
Continuous Drain Current (Id): 16A at 25°C
Power Dissipation (Max): 60W at 25°C
Gate Charge (Qg): 80nC @ 10V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
Manufactured using robust MOSFET technology
Compliant with relevant safety standards
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power conversion applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
DC-DC converters
Product Lifecycle
This MOSFET is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High current handling capability (16A) for efficient power conversion
Low on-state resistance (47mΩ) for minimizing power losses
Wide operating temperature range (-55°C to 150°C) for versatile applications
Robust MOSFET technology for reliable performance
Suitable for surface mount applications for compact design
RFD16N05onsemiMOSFET N-CH 50V 16A I-PAK